发明名称 Workpiece Processing Method And Apparatus
摘要 A system and method for processing a workpiece is disclosed. A plasma chamber is used to create a ribbon ion beam, extracted through an extraction aperture. A workpiece is translated proximate the extraction aperture so as to expose different portions of the workpiece to the ribbon ion beam. As the workpiece is being exposed to the ribbon ion beam, at least one parameter associated with the plasma chamber is varied. The variable parameters include extraction voltage duty cycle, workpiece scan velocity and the shape of the ion beam. In some embodiments, after the entire workpiece has been exposed to the ribbon ion beam, the workpiece is rotated and exposed to the ribbon ion beam again, while the parameters are varied. This sequence may be repeated a plurality of times.
申请公布号 US2016111254(A1) 申请公布日期 2016.04.21
申请号 US201514878519 申请日期 2015.10.08
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Evans Morgan D.;Anglin Kevin;Distaso Daniel;Hautala John;Sherman Steven Robert;Olson Joseph C.
分类号 H01J37/32;C23C14/22;C23C14/54;C23C14/48 主分类号 H01J37/32
代理机构 代理人
主权项 1. A method of processing a workpiece using a plasma chamber, comprising: extracting a ribbon ion beam through an extraction aperture of the plasma chamber; translating the workpiece relative to the plasma chamber so that different portions of the workpiece are exposed to the ribbon ion beam; and varying at least one parameter of the plasma chamber while the workpiece is being translated.
地址 Gloucester MA US