发明名称 PATTERNING PROCESS AND CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION
摘要 A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl and/or hydroxyl group optionally substituted with an acid labile group and an acid generator capable of generating fluorinated tetraphenylborate onto a substrate, prebaking, exposing, baking, and developing in an organic solvent so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high sensitivity and high dissolution contrast during organic solvent development and forms a fine hole or trench pattern via positive/negative reversal.
申请公布号 US2016109803(A1) 申请公布日期 2016.04.21
申请号 US201514886284 申请日期 2015.10.19
申请人 Shin-Etsu Chemical Co., Ltd. 发明人 Hatakeyama Jun;Ohashi Masaki
分类号 G03F7/32;G03F7/038;G03F7/38;G03F7/16;G03F7/20 主分类号 G03F7/32
代理机构 代理人
主权项 1. A pattern forming process comprising the steps of: applying a resist composition onto a substrate, prebaking the composition to form a resist film, exposing a selected region of the resist film to high-energy radiation, baking, and developing the exposed resist film in an organic solvent-based developer to form a negative pattern wherein the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved, said resist composition comprising a polymer comprising recurring units having a carboxyl group which may or may not be substituted with an acid labile group and/or a hydroxyl group which may or may not be substituted with an acid labile group excluding α-trifluoromethylhydroxy, and an acid generator capable of generating fluorinated tetraphenylborate.
地址 Tokyo JP