METHOD AND DEVICE OF MEMS PROCESS CONTROL MONITORING AND PACKAGED MEMS WITH DIFFERENT CAVITY PRESSURES

摘要

A method for fabricating an integrated MEMS device and the resulting structure therefore. A control process monitor comprising a MEMS membrane cover can be provided within an integrated CMOS-MEMS package to monitor package leaking or outgassing. The MEMS membrane cover can separate an upper cavity region subject to leaking from a lower cavity subject to outgassing. Differential changes in pressure between these cavities can be detecting by monitoring the deflection of the membrane cover via a plurality of displacement sensors. An integrated MEMS device can be fabricated with a first and second MEMS device configured with a first and second MEMS cavity, respectively. The separate cavities can be formed via etching a capping structure to configure each cavity with a separate cavity volume. By utilizing an outgassing characteristic of a CMOS layer within the integrated MEMS device, the first and second MEMS cavities can be configured with different cavity pressures.

主权项

1. An integrated MEMS (Micro Electro Mechanical System) device comprising:
a semiconductor substrate having a plurality of CMOS devices formed thereon, wherein the semiconductor substrate includes an upper surface, wherein the upper surface of the semiconductor substrate is associated with an outgassing characteristic; a dielectric material layer disposed upon the semiconductor substrate, wherein the dielectric material includes a plurality of cavities formed thereon including a first lower cavity and a second lower cavity, exposing portions of the upper surface of the semiconductor substrate; a first MEMS device disposed adjacent to the first lower cavity; a second MEMS device disposed adjacent to the second lower cavity; a capping structure disposed above the dielectric material layer, wherein the capping structure includes a plurality of cap regions formed thereon including a first cap region and a second cap region, wherein the first cap region and the first lower cavity enable formation of a first MEMS cavity, wherein the first MEMS device is disposed within the first MEMS cavity, wherein the second cap region and the second lower cavity enable formation of a second MEMS cavity, wherein the second MEMS device is disposed within the second MEMS cavity; wherein the outgassing characteristic of the semiconductor substrate causes a gas pressure within the first MEMS cavity to be different from a gas pressure within the second MEMS cavity.