FILM FOR BACK FACE OF FLIP-CHIP TYPE SEMICONDUCTOR, FILM FOR BACK FACE OF DICING TAPE-INTEGRATED SEMICONDUCTOR, AND PRODUCTION METHOD OF FILM FOR BACK FACE OF FLIP-CHIP TYPE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide an electromagnetic wave shield layer on a back face of a semiconductor element to be subjected to flip-chip connection on an adherend, and to produce a semiconductor device having the electromagnetic wave shield layer without decreasing productivity.SOLUTION: A film for a back face of a flip-chip type semiconductor is provided to be applied on a back face of a semiconductor element subjected to flip-chip connection on an adherend. The film includes an adhesive layer and an electromagnetic wave shield layer, in which the electromagnetic wave shield layer is a conductive layer or a dielectric layer and a separator is disposed on at least one surface of the film.SELECTED DRAWING: Figure 1