| 发明名称 |
SELECT DEVICE FOR MEMORY CELL APPLICATIONS |
| 摘要 |
The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device. |
| 申请公布号 |
US2016111639(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201414515998 |
申请日期 |
2014.10.16 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Wells David H.;Cardon Christopher D.;Onal Caner |
| 分类号 |
H01L45/00;G11C13/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory cell, comprising:
a select device including:
a first electrode having a particular geometry;a semiconductor material formed on the first electrode; anda second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device. |
| 地址 |
Boise ID US |
