FIN DEVICE WITH BLOCKING LAYER IN CHANNEL REGION

摘要

A semiconductor device includes a fin defined on a substrate and a gate electrode structure formed above the fin. A channel region of the device is defined beneath the gate electrode structure and source/drain regions of the fin are defined adjacent the gate electrode structure. A dielectric layer is defined at least in the channel region. The dielectric layer includes oxygen and at least one of nitrogen, carbon or fluorine.

主权项

1. A semiconductor device, comprising:
a fin defined on a substrate; a gate electrode structure formed above said fin, wherein a channel region of said device is defined beneath said gate electrode structure and source/drain regions of said fin are defined adjacent said gate electrode structure; and a dielectric layer defined at least in said channel region, said dielectric layer comprising oxygen and at least one of nitrogen, carbon or fluorine.