METHOD OF USING ALUMINUM LAYER AS ETCHING STOP LAYER FOR PATTERNING A PLATINUM LAYER

摘要

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a dielectric layer; forming an aluminum layer on the dielectric layer; forming a platinum layer on the aluminum layer; performing a first etching process to remove part of the platinum layer and part of the aluminum layer for forming a patterned platinum layer; and performing a second etching process to remove part of the aluminum layer exposed by the patterned platinum layer and part of the dielectric layer.

主权项

1. A method for fabricating semiconductor device, comprising:
providing a substrate having a dielectric layer; forming an aluminum layer on the dielectric layer; forming a platinum layer on and cover the aluminum layer entirely; performing a first etching process to remove part of the platinum layer and part of the aluminum layer for forming a patterned platinum layer; and performing a second etching process to remove part of the aluminum layer exposed by the patterned platinum layer and part of the dielectric layer.