| 摘要 |
751,278. Semi-conductor devices. RADIO CORPORATION OF AMERICA. April 30, 1954 [May 28, 1953], No. 12663/54. Class 37. A semi-conductor body comprising PN junctions is produced by applying a holder to define an aperture on each side of the semiconductor body and applying impurity material to the surface of the body within the apertures. Fig. 1 shows a clip-shaped nickel or steel holder 6 with tinned surface 8 and with apertures 10 and 11, holding a germanium or silicon body 2. Pellets 16, 18 of impurity material such as indium, thallium or antimony are placed in carbon tubes 12 and 14 lodged in the apertures against the side of body 2. Lead wires 20 and 22 of gold, platinum or palladium are placed against the impurity pellets. Heating to a temperature between 600‹ and 900‹ C. is effected by means of coils 30 and 32 to alloy the impurity with the semi-conductor material, in an atmosphere of hydrogen or argon. The process also solders the clip 6 to the body 2 and fuses the lead wires 20 and 22 to the impurity. Fig. 4 shows the completed device constituting a transistor with base electrode 6, and alloy junction emitter and collector electrodes 16<SP>1</SP> and 181. Emitter and collector junctions may thus be formed simultaneously, while receiving different: appropriate heating treatments. |
