HIGH-SPEED DEPOSITION OF MIXED OXIDE BARRIER FILMS

摘要

The present disclosure relates to metal oxide barrier films and particularly to high-speed methods for depositing such barrier films. Methods are disclosed that are capable of producing barrier films with water vapor transmission rates (WVTR) below 0.1 g/(m2·day). Methods are disclosed for continuously transporting a substrate within an atomic layer deposition (ALD) reactor and performing a limited number of ALD cycles to achieve a desired WVTR.

主权项

1. A method of forming a barrier layer on a substrate, the method comprising:
continuously transporting the substrate at a speed of at least about 2 meters per second (m/s) within an atomic layer deposition (ALD) reactor; and depositing one of alumina or titania on a portion of the substrate in a first ALD cycle, while the substrate is moving; and depositing the other one of alumina or titania on the same portion of the substrate in a second ALD cycle, while the substrate is moving, repeating the deposition steps for a total of about 50 or less ALD cycles, thereby forming a barrier layer comprising alumina and titania and having a water vapor transmission rate (WVTR) of less than about 0.1 g/(m2·day).