METHOD OF MANUFACTURING SILICON CARBIDE POWDER CONTANING VANADIUM AND SILICON CARBIDE SINGLE CRYCTAL THEREOF

摘要

The present invention relates to a preparation method of silicon carbide powder, which prepares a silicon carbide precursor having a uniform Si-O-V network and prepares silicon carbide powder with uniformly doped vanadium in the lattice of the silicon carbide precursor through a carbothermal reduction reaction, and to silicon carbide powder for growing silicon carbide crystals having high resistance prepared thereby.