| 摘要 |
PROBLEM TO BE SOLVED: To improve the switching speed.SOLUTION: A semiconductor device according to an embodiment comprises: a first electrode; a second electrode; a first semiconductor region provided between these electrodes; a first element region that has a second semiconductor region provided between the first semiconductor region and the first electrode, a third semiconductor region provided between the first semiconductor region and the second electrode, a fourth semiconductor region provided between the third semiconductor region and the second electrode, and a third electrode provided in the first semiconductor region, the third semiconductor region, and the fourth semiconductor region via a first insulating film; a second element region that has a fifth semiconductor region of a first conductivity type provided between the first semiconductor region and the first electrode and having a higher impurity concentration than the first semiconductor region, and a sixth semiconductor region of a second conductivity type provided between the first semiconductor region and the second electrode; and a separation region that has a seventh semiconductor region of the second conductivity type provided between the first semiconductor region and the second electrode and contacted with the second electrode, and that is located between the first element region and the second element region.SELECTED DRAWING: Figure 1 |
