发明名称 |
Desensitization of Aluminum Alloys Using Pulsed Electron Beams |
摘要 |
A method for desensitizing an aluminum alloy is presented. A desired location on the surface of an aluminum alloy sample is exposed to a controlled pulsed electron beam. The pulsed electron beam heats a shallow layer of the metal alloy having a desired depth at the desired location on the surface of the sample to a temperature between a solvus temperature and an annealing temperature of the metal alloy to controllably reduce a degree of sensitization of the metal alloy sample at the desired location, an extent of a reduction in the degree of sensitization being controllable by varying at least one of a voltage, a current density, a pulse duration, a pulse frequency and a number of pulses of the electron beam. |
申请公布号 |
US2016108504(A1) |
申请公布日期 |
2016.04.21 |
申请号 |
US201514614686 |
申请日期 |
2015.02.05 |
申请人 |
The Government of the United States of America, as represented by the Secretary of the Navy |
发明人 |
Sethian John D.;Myers Matthew C.;Wolford Mathew;Hegeler Frank;Holtz Ronald L.;Horton Derek;Lewis Alexis C.;Wahl Kathryn J. |
分类号 |
C22F1/047;C21D1/34;C22C21/08 |
主分类号 |
C22F1/047 |
代理机构 |
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代理人 |
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主权项 |
1. A method for controllably desensitizing a metal alloy sample, comprising:
exposing a specific desired location on a surface of the sample to a controlled pulsed electron beam having a voltage greater than 100 kV to about 650 kV: wherein the electron beam is controllably directed to the specific desired location without exposing other areas on the sample to the electron beam; and wherein the electron beam heats a shallow surface layer of the metal alloy having a desired depth at the specific desired location on the surface of the sample to a controlled temperature between a solvus temperature and an annealing temperature of the metal alloy without heating a bulk of the sample to controllably reduce a degree of sensitization of the metal alloy sample at the specific desired location, an extent of a reduction in the degree of sensitization being controllable by varying at least one of a voltage, a current density, a pulse duration, and a pulse frequency of the electron beam. |
地址 |
Washington DC US |