CONTACT FOR SILICON HETEROJUNCTION SOLAR CELLS

摘要

A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.

主权项

1. A photovoltaic device, comprising:
a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate; at least one of the emitter side structure and the back side structure including a plurality of layers alternately including wide band gap layers and narrow band gap layers to provide a multilayer contact with at least one of an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact; an emitter contact coupled to the emitter side structure on a light collecting end portion of the device; and a back contact coupled to the back side structure opposite the light collecting end portion.