发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A method of manufacturing a semiconductor device includes the steps of placing, on a heat sink made of a metal, a semiconductor element and a frame surrounding the semiconductor element, placing solder on an upper surface of the frame, placing a cap on the solder, and heating the solder while exerting on the cap a force to be applied toward the frame without scrubbing the cap on the frame. In the heating step a heat source is brought into contact with the heat sink and the solder is heated with the heat source.
申请公布号 US2016111300(A1) 申请公布日期 2016.04.21
申请号 US201514743709 申请日期 2015.06.18
申请人 Mitsubishi Electric Corporation 发明人 NISHIHARA Tatsuto
分类号 H01L21/48 主分类号 H01L21/48
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device, comprising the steps of: placing, on a heat sink made of a metal, a semiconductor element and a frame surrounding the semiconductor element; placing solder on an upper surface of the frame; placing a cap on the solder and the frame to thereby create, in a first region, a direct abutment between the cap and the frame, and, in a second region, an arrangement in which the solder is positioned between the cap and the frame, wherein the first region is positioned between the second region and the semiconductor element; and heating step for heating the solder while exerting on the cap a force to be applied toward the frame without scrubbing the cap on the frame; wherein in the heating step a heat source is brought into contact with the heat sink and the solder is heated with the heat source, and wherein the abutment between the cap and the frame in the first region prevents the solder from intruding from the second region into an interior of the semiconductor device.
地址 Tokyo JP