发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0). |
申请公布号 |
US2016111282(A1) |
申请公布日期 |
2016.04.21 |
申请号 |
US201514972964 |
申请日期 |
2015.12.17 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
AKIMOTO Kengo;SAKATA Junichiro;HIROHASHI Takuya;TAKAHASHI Masahiro;KISHIDA Hideyuki;MIYANAGA Akiharu |
分类号 |
H01L21/02;H01L21/28;H01L29/66 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |