| 发明名称 |
STATIC RANDOM ACCESS MEMORY AND METHOD OF CONTROLLING THE SAME |
| 摘要 |
A static random access memory (SRAM) including at least a first memory cell array, a second memory cell array, a first data line connected to the first memory cell array and the second memory cell array, a primary driver circuit connected to the first data line and a supplementary driver circuit connected to the first data line, wherein the supplementary driver circuit is configured to pull a voltage level of the first data line to a first voltage level during a write operation of the SRAM. |
| 申请公布号 |
US2016111143(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201414515253 |
申请日期 |
2014.10.15 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN Chih-Yu;WU Wei-Cheng;LIN Kao-Cheng;CHEN Yen-Huei |
| 分类号 |
G11C11/419 |
主分类号 |
G11C11/419 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A static random access memory (SRAM) comprising:
a first memory cell array; a second memory cell array; a first data line connected to the first memory cell array and the second memory cell array; a primary driver circuit connected to the first data line; a supplementary driver circuit connected to the first data line, wherein the supplementary driver circuit is configured to pull a voltage level of the first data line to a first voltage level during a write operation of the SRAM. |
| 地址 |
Hsinchu TW |
