METHOD FOR ETCHING MULTILAYER FILM

摘要

The method according to one embodiment includes: (a) a step for etching an upper magnetic layer by means of plasma that is generated inside a processing vessel, wherein the etching of the upper magnetic layer is terminated at the surface of an insulating layer; (b) a step for removing deposits that have formed on the surface of a mask and of the upper magnetic layer as a result of the etching of the upper magnetic layer by means of the plasma generated inside the processing vessel; and (c) a step for etching the insulating layer by means of plasma that is generated inside the processing vessel. During the step for removing the deposits, a support structure that holds a workpiece is tilted and rotated and a pulse-modulated direct current voltage is applied to the support structure as a bias voltage for accumulating ions.