| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus or processing method that is improved in yield of processing.SOLUTION: A plasma processing method includes: a first process of arranging a wafer to be processed in a pressure-reduced processing chamber in a vacuum container, and discharging a reactive gas left in the processing chamber while stopping supplying the reactive gas; a third process of generating plasma in the processing chamber by introducing an inert gas into the processing chamber and desorbing reaction products between an adsorption layer and the film to be processed using particles in the plasma and vacuum ultraviolet light generated from the plasma; and a fourth process of discharging the reaction products from inside the processing chamber while no plasma is being generated.SELECTED DRAWING: Figure 4 |
