发明名称 |
PATTERNING METHOD, PHOTOMASK, AND TEMPLATE FOR NANOIMPRINT |
摘要 |
PROBLEM TO BE SOLVED: To provide a patterning method which enhances the pinning performance of a guide pattern, and to provide a photomask and a template for nanoimprint produced using this patterning method.SOLUTION: A patterning method forms a ground layer 2 on a processed layer 1. In the ground layer 2, affinity for one of a first segment or a second segment, contained in a self-organization material, is higher than that for the other. A neutralization film 3 is formed on the ground layer 2. The neutralization film 3 is neutral for the first segment and second segment. A part of the neutralization film 3 is removed. The exposed surface of the ground layer 2 and the surface of the neutralization film 3 are irradiated with an energy beam. The self-organization material is applied onto the ground layer 2 and neutralization film 3. Phase-separation of the self-organization material to a first domain containing the first segment and a second domain containing the second segment is performed. One of first domain containing the first segment or second domain is removed selectively.SELECTED DRAWING: Figure 3 |
申请公布号 |
JP2016058640(A) |
申请公布日期 |
2016.04.21 |
申请号 |
JP20140185503 |
申请日期 |
2014.09.11 |
申请人 |
TOSHIBA CORP |
发明人 |
SAKURAI HIDEAKI;SUENAGA MACHIKO;MOTOKAWA KOJI;TERAYAMA MASATOSHI |
分类号 |
H01L21/027;B29C33/38;B29C59/02;B82Y30/00;B82Y40/00;G03F7/40 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|