发明名称 PATTERNING METHOD, PHOTOMASK, AND TEMPLATE FOR NANOIMPRINT
摘要 PROBLEM TO BE SOLVED: To provide a patterning method which enhances the pinning performance of a guide pattern, and to provide a photomask and a template for nanoimprint produced using this patterning method.SOLUTION: A patterning method forms a ground layer 2 on a processed layer 1. In the ground layer 2, affinity for one of a first segment or a second segment, contained in a self-organization material, is higher than that for the other. A neutralization film 3 is formed on the ground layer 2. The neutralization film 3 is neutral for the first segment and second segment. A part of the neutralization film 3 is removed. The exposed surface of the ground layer 2 and the surface of the neutralization film 3 are irradiated with an energy beam. The self-organization material is applied onto the ground layer 2 and neutralization film 3. Phase-separation of the self-organization material to a first domain containing the first segment and a second domain containing the second segment is performed. One of first domain containing the first segment or second domain is removed selectively.SELECTED DRAWING: Figure 3
申请公布号 JP2016058640(A) 申请公布日期 2016.04.21
申请号 JP20140185503 申请日期 2014.09.11
申请人 TOSHIBA CORP 发明人 SAKURAI HIDEAKI;SUENAGA MACHIKO;MOTOKAWA KOJI;TERAYAMA MASATOSHI
分类号 H01L21/027;B29C33/38;B29C59/02;B82Y30/00;B82Y40/00;G03F7/40 主分类号 H01L21/027
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