| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing a semiconductor single crystal rod, capable of growing a single crystal while correcting the inclination of the single crystal rod when manufacturing the single crystal by a FZ method (a floating zone method or a floating zone melting method).SOLUTION: An apparatus for manufacturing a semiconductor single crystal rod by an FZ method can melt a part of a raw material crystal rod by an induction heating coil to form a melting zone, and move the melting zone in the axial direction by moving the upper side raw material crystal rod and a lower side single crystal rod to the induction heating coil in the axial direction to grow the single crystal rod. The apparatus compromises: an upper shaft 3 for holding the raw material crystal rod; a lower shaft 5 for holding the single crystal rod; an electrode 8 for supplying high frequency electric power to the induction heating coil; a mechanism 21 for detecting the inclinations of any one or more central axes of the upper shaft 3, the lower shaft 5 and the electrode 8 or the displacements thereof from a reference position; a mechanism 22 for automatically adjusting the detected inclinations of the central axes or the displacements thereof from the reference position; and inclination/displacement control means 20 constituted of a calculation mechanisms 23 for calculating the amounts of adjustment.SELECTED DRAWING: Figure 2 |
