发明名称 Gate Leakage Based Low Power Circuits
摘要 A low power voltage divider facility using gate leakage characteristics to divide voltage levels of sub-threshold and near-threshold circuits. The divider comprises a gate leakage based divider facility, and, optionally, a capacitive divider facility.
申请公布号 US2016112042(A1) 申请公布日期 2016.04.21
申请号 US201514918384 申请日期 2015.10.20
申请人 Ambiq Micro, Inc. 发明人 Hanson Scott;Bartlett Donald Mark;Lu Yanning
分类号 H03K17/687;H03M1/12;G01R19/00;G05F1/56 主分类号 H03K17/687
代理机构 代理人
主权项 1. A voltage divider facility comprising: a first gate leakage-based divider facility coupled between first and second voltages and adapted to develop a first divided voltage intermediate the first and second voltages; and a first capacitive facility coupled between the first and second voltages and adapted to adjust a transient behavior of the first gate-leakage based divider facility.
地址 Austin TX US