发明名称 |
Gate Leakage Based Low Power Circuits |
摘要 |
A low power voltage divider facility using gate leakage characteristics to divide voltage levels of sub-threshold and near-threshold circuits. The divider comprises a gate leakage based divider facility, and, optionally, a capacitive divider facility. |
申请公布号 |
US2016112042(A1) |
申请公布日期 |
2016.04.21 |
申请号 |
US201514918384 |
申请日期 |
2015.10.20 |
申请人 |
Ambiq Micro, Inc. |
发明人 |
Hanson Scott;Bartlett Donald Mark;Lu Yanning |
分类号 |
H03K17/687;H03M1/12;G01R19/00;G05F1/56 |
主分类号 |
H03K17/687 |
代理机构 |
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代理人 |
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主权项 |
1. A voltage divider facility comprising:
a first gate leakage-based divider facility coupled between first and second voltages and adapted to develop a first divided voltage intermediate the first and second voltages; and a first capacitive facility coupled between the first and second voltages and adapted to adjust a transient behavior of the first gate-leakage based divider facility. |
地址 |
Austin TX US |