发明名称 INTEGRATED SERVO FIELD FOR MEMORY DEVICE
摘要 A pattern of features of a storage medium includes first features having a first logical state and second features having a second logical state, wherein a cross track dimension of the first features is different from a cross track dimension of the second features. A transducer of a memory device senses the pattern of features and generates a transducer signal. Read circuitry samples the transducer signal at a frequency of a sampling clock signal and generates a read signal from the sampled transducer signal. Servo electronics includes a demodulator that demodulates at least first and second orthogonal frequency components of the read signal. Timing circuitry synchronizes a phase of the sampling clock signal with a phase of the pattern of features using the first orthogonal frequency component. Position error circuitry generates a signal indicating a cross track positional offset of the transducer relative to the features using the first and second orthogonal frequency components.
申请公布号 US2016111119(A1) 申请公布日期 2016.04.21
申请号 US201514822093 申请日期 2015.08.10
申请人 Seagate Technology LLC 发明人 Buch Bruce Douglas
分类号 G11B5/596;G11B20/10 主分类号 G11B5/596
代理机构 代理人
主权项
地址 Cupertino CA US
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