| 发明名称 |
THIN FILM MANUFACTURING METHOD AND ATOMIC LAYER DEPOSITION APPARATUS |
| 摘要 |
A method of manufacturing a silicon nitride (Si3N4) film at low temperature using an atomic layer deposition (ALD), and an ALD apparatus for the same are disclosed. The method of manufacturing a Si3N4 film uses a silicon precursor material including silicon as a source gas, an N2 gas activated by plasma as a reaction gas, and an N2 gas as a purge gas, and manufactures a Si3N4 film by providing gases in an order of the source gas, the purge gas, the reaction gas, and the purge gas. |
| 申请公布号 |
US2016108518(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201514834230 |
申请日期 |
2015.08.24 |
| 申请人 |
K.C. Tech Co., Ltd. |
发明人 |
PARK Sung Hyun;SHIN In Chul;LEE Keun Woo;KIM Kyung Joon |
| 分类号 |
C23C16/34;C23C16/44;H01L21/02;C23C16/455 |
主分类号 |
C23C16/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film manufacturing method of manufacturing a silicon nitride (Si3N4) film by providing gases in an order of a source gas, a purge gas, a reaction gas, and the purge gas,
wherein a silicon precursor material comprising silicon is used as the source gas, a nitrogen (N2) gas activated by plasma is used as the reaction gas, and an N2 gas is used as the purge gas. |
| 地址 |
Anseong-si KR |
