| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which prevents warpage of a semiconductor substrate.SOLUTION: A semiconductor device manufacturing method of an embodiment comprises the steps of grinding, polishing and etching a second surface of a semiconductor substrate which has a first surface and the second surface, where a gallium nitride-containing layer provided on the first surface and has a thickness d1 to make the thickness of the semiconductor substrate be equal to or less than one fifth of d1.SELECTED DRAWING: Figure 1 |
