| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of a semiconductor device; and reduce manufacturing cost.SOLUTION: A semiconductor device comprises a plurality of photodiodes arranged on a principal surface of a semiconductor substrate in an array, ptype semiconductor regions PR each surrounding each photodiode in plan view and a plurality of transistors arranged among photodiodes adjacent to each other in a Y direction. A semiconductor device manufacturing method comprises: a process of forming ptype semiconductor regions PR by ion implantation of a p type impurity into a semiconductor substrate by using a mask layer KM having an opening for opening a scheduled area where the ptype semiconductor regions PR are to be formed; and a process of performing ion implantation of an n type impurity into the semiconductor substrate by using the mask layer MK. In the process of performing ion implantation of the n type impurity, ion implantation is performed on regions among photodiode formation scheduled regions PDA adjacent to each other in the Y direction but ion implantation is not performed on regions among the photodiode formation scheduled regions PDA adjacent to each other in an X direction.SELECTED DRAWING: Figure 29 |
