SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with high performance.SOLUTION: A semiconductor device comprises: a graphene layer 12 provided on a substrate 10; a source electrode 24 and a drain electrode 26 provided on the graphene layer; a first gate electrode 20 and a second gate electrode 22 provided on the graphene layer between the source electrode and the drain electrode. The first gate electrode is provided at the source electrode side between the source electrode and the drain electrode. The second gate electrode is provided at the drain electrode side between the source electrode and the drain electrode.SELECTED DRAWING: Figure 4