| 摘要 |
PROBLEM TO BE SOLVED: To provide a proximity effect correction method for reducing the calculation load with high accuracy in charged particle lithography, and to provide a proximity effect correction program and a proximity effect correction device using the same.SOLUTION: A proximity effect correction method splits a drawing area into partitions of the extent of backscatter, creates a split area map for further splitting the partition locally into small partitions, based on the information of a pattern, when a very small part is included in the pattern size or the distance between patterns, creates an area density map for each partition, based on the information of a pattern and the information of the split area map, and then creates a proximity effect correction irradiation amount map based on the information of the area density map, and the information of the backscatter correction factor for each partition. A proximity effect correction program and a proximity effect correction device using the same are also provided.SELECTED DRAWING: Figure 1 |
