| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory having high reliability.SOLUTION: A semiconductor memory includes first and second select gates of one end side of a memory unit. A first select gate transistor SGCT has a channel region CRa in a semiconductor substrate 700, a channel region CRb in a semiconductor pillar 75 and a gate electrode 73 connected to a first select gate line SGC. A second select gate transistor SGST has a channel region in the semiconductor pillar 75 and a gate electrode 72 connected to a second select gate line SGS. The first select gate line SGC is connected to a first voltage circuit 220, and the second select gate SGS is connected to a second voltage circuit 440.SELECTED DRAWING: Figure 4 |
