MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a normally-off transistor without increasing the number of processing steps.SOLUTION: While injecting ion of a first impurity 80a of a second conductivity type into a first gate adjacent area 78a which is in contact with a side face of the first gate electrode 48a, in a planar view, in a first semiconductor area 68a of a first conductivity type, a first impurity of a second conductivity type is injected into a second gate adjacent area 78b which is in contact with a second gate electrode 48b, in a planar view, in a second semiconductor area 68b of the second conductivity type.SELECTED DRAWING: Figure 13