发明名称 |
AIR GAP SPACER INTEGRATION FOR IMPROVED FIN DEVICE PERFORMANCE |
摘要 |
A method for providing a FinFET device with an air gap spacer includes providing a substrate a plurality of fins and a dummy gate arranged transverse to the plurality of fins; depositing a sacrificial spacer around the dummy gate; depositing a first interlayer dielectric (ILD) layer around the sacrificial spacer; selectively etching the dummy polysilicon gate relative to the first ILD layer and the sacrificial spacer; depositing a replacement metal gate (RMG); etching a portion of the RMG to create a recess surrounded by the sacrificial spacer; and depositing a gate capping layer in the recess. The gate capping layer is at least partially surrounded by the sacrificial spacer and is made of silicon oxycarbide (SiOC). |
申请公布号 |
US2016111515(A1) |
申请公布日期 |
2016.04.21 |
申请号 |
US201514884264 |
申请日期 |
2015.10.15 |
申请人 |
Lam Research Corporation |
发明人 |
Besser Paul Raymond;van Schravendijk Bart;Kimura Yoshie;Delgadino Gerardo A.;Orkorn-Schmidt Harald;Yang Dengliang |
分类号 |
H01L29/49;H01L29/78;H01L29/66 |
主分类号 |
H01L29/49 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Fremont CA US |