发明名称 MULTILEVEL MASK CIRCUIT FABRICATION AND MULTILAYER CIRCUIT
摘要 Circuit fabrication uses a multilevel mask to pattern a first conductor layer of a multilayer circuit. The first conductor patterning is to provide electrical isolation between the first conductor layer and a second conductor layer that one of overlies the multilevel mask and underlies the multilevel mask. With the second conductor layer overlying the multilevel mask, the electrical isolation is provided by undercutting the multilevel mask. Alternatively, with the second conductor underlying the multilevel mask, the first conductor includes a bridged gapped conductor and the electrical isolation may be provided by both the bridged gapped conductor and an insulating layer between the second conductor layer and the first conductor layer.
申请公布号 US2016111328(A1) 申请公布日期 2016.04.21
申请号 US201314787223 申请日期 2013.04.30
申请人 APPLIED MATERIALS, INC. 发明人 MEI Ping;TAUSSIG Carl A.;ALMANZA-WORKMAN Marcia
分类号 H01L21/768;H01L23/528;H01L21/3213 主分类号 H01L21/768
代理机构 代理人
主权项 1. A method of multilevel mask circuit fabrication, the method comprising: patterning a first conductor layer of a multilayer circuit using a multilevel mask, the first conductor layer patterning to one of: provide electrical isolation between the first conductor layer and a second conductor layer that overlies the multilevel mask, the electrical isolation being provided by undercutting the multilevel mask; andprovide electrical isolation between the first conductor layer and a second conductor layer that underlies the multilevel mask, the first conductor layer comprising a bridged gapped conductor, the electrical isolation being provided by both the bridged gapped conductor and a insulating layer between the second conductor layer and the first conductor layer.
地址 Santa Clara CA US