发明名称 |
METHODS FOR PRODUCING LOW OXYGEN SILICON INGOTS |
摘要 |
An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt. |
申请公布号 |
US2016108551(A1) |
申请公布日期 |
2016.04.21 |
申请号 |
US201414893280 |
申请日期 |
2014.05.22 |
申请人 |
BASAK Soubir;SUNEDISON SEMICONDUCTOR LIMITED |
发明人 |
Basak Soubir;Hudson Carissima Marie;Samanta Gaurab;Ryu Jae-Woo;Sreedharamurthy Hariprasad;McCallum Kirk D.;Lee HyungMin |
分类号 |
C30B15/20;C30B15/30;H01L29/165;C30B30/04;H01L29/739;H01L29/167;C30B15/04;C30B29/06 |
主分类号 |
C30B15/20 |
代理机构 |
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代理人 |
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主权项 |
1. A method for producing a silicon ingot, the method comprising:
melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt; generating a cusped magnetic field within the vacuum chamber; dipping a seed crystal into the melt; withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm); and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma), wherein the plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt. |
地址 |
St. Peters MO US |