ARTIFICIAL NEURON SEMICONDUCTOR ELEMENT HAVING THREE-DIMENSIONAL STRUCTURE AND ARTIFICIAL NEURON SEMICONDUCTOR SYSTEM USING SAME

摘要

An artificial neuron semiconductor element having a three-dimensional structure comprises: a first electrode to which a clock signal is applied and a second electrode in which an output signal is generated; an insulation column; a plurality of electrode layers for receiving an electrical signal from at least one synapse circuit; and a phase change layer which is divided into at least two parts by the insulation column and is in contact with at least two side surfaces of the insulation column, the phase change layer making a phase change by the plurality of electrode layers.