| 摘要 |
A method for producing semiconductor integrated circuit devices is provided which, during a photomask step for forming logic gate electrodes (G5, G6) in peripheral circuit region (ER2), is capable of forming, in a memory circuit region (ER1), first selection gate electrodes (G2a, G2b) and second selection gate electrodes (G3a, G3b) which are electrically separated. Accordingly, an extra dedicated photomask step for processing only the memory circuit region (ER1) does not need to be further added to a conventional dedicated photomask step for processing only the memory circuit region, even when forming the first selection gate electrodes (G2a, G2b) and the second selection gate electrodes (G3a, G3b) which are capable of being independently controlled, and thus production costs can be reduced. Also provided is a semiconductor integrated circuit device. |
