METHOD TO CO-INTEGRATE SiGe AND Si CHANNELS FOR FINFET DEVICES

摘要

A method for co-integrating finFETs of two semiconductor material types, e.g., Si and SiGe, on a bulk substrate is described. Fins for finFETs may be formed in an epitaxial layer of a first semiconductor type, and covered with an insulator. A portion of the fins may be removed to form voids in the insulator, and the voids may be filled by epitaxially growing a semiconductor material of a second type in the voids. The co-integrated finFETs may be formed at a same device level.

主权项

1. A method for making co-integrated finFETs, the method comprising:
forming a plurality of fins of a first semiconductor material for finFETs of a first type; removing a portion of the plurality of fins to form voids; and filling the voids with a second semiconductor material to form fins for finFETs of a second type.