发明名称 TRANSIT STRUCTURE OF WAVEGUIDE AND SIW
摘要 A transit structure of a waveguide and a SIW is provided. According to the present invention, a SIW and a waveguide are directly connected so that when a signal is transited with a reduced loss and a signal is transmitted while satisfying a frequency band width required for an automotive radar. Further, signal transmission characteristic at every frequency in a bandwidth may be uniformly maintained. Further, an additional dielectric substrate is not required so that a reduced size, a reduced weight, and a reduced cost may be achieved and a process of bonding different substrates is not required.
申请公布号 US2016111764(A1) 申请公布日期 2016.04.21
申请号 US201514592705 申请日期 2015.01.08
申请人 HYUNDAI MOBIS CO., LTD. 发明人 KIM Sung Joo
分类号 H01P5/08 主分类号 H01P5/08
代理机构 代理人
主权项 1. A transit structure of a waveguide and a SIW (Substrate Integrated Waveguide), comprising: a SIW; and a waveguide which is formed in the form of a metallic tube and is directly coupled to a lower surface of the SIW in a perpendicular direction, wherein the SIW includes a dielectric substrate; a first conductor which is disposed on an upper surface of the dielectric substrate; a second conductor which is disposed on a lower surface of the dielectric substrate, a region of the second conductor corresponding to an aperture of the waveguide being etched to form a non-resonating slot; a plurality of vias which is disposed in the dielectric substrate in accordance with a predetermined pattern to form a transmission path through which the signal is transmitted in the SIW and an impedance matching box which transits a signal which is transmitted to the SIW or the waveguide; and a stub which is formed in a region where the non-resonating slot is formed in order to perform impedance matching between the SIW and the waveguide.
地址 Seoul KR