发明名称 LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME
摘要 A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
申请公布号 US2016111600(A1) 申请公布日期 2016.04.21
申请号 US201514985162 申请日期 2015.12.30
申请人 Seoul Viosys Co., Ltd. 发明人 Chae Jong Hyeon;Lee Joon Sup;Suh Daewoong;Roh Won Young;Kang Min Woo;Jang Jong Min;Oh Se Hee;Kim Hyun A.
分类号 H01L33/38;H01L33/24;H01L33/40 主分类号 H01L33/38
代理机构 代理人
主权项 1. A light emitting diode comprising: a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed over the first conductive-type semiconductor layer and an active layer interposed between the second conductive-type semiconductor layer and the first conductive-type semiconductor layer; and a first electrode disposed over the mesa, wherein the first conductive-type semiconductor layer comprises a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
地址 Ansan-si KR