| 摘要 |
PROBLEM TO BE SOLVED: To provide better protection against over-etching of gate stacks thereby minimizing gate-to-contact leakage, increasing flexibility in terms of materials and deposition conditions used for forming various dielectric materials, and minimizing parasitic capacitance.SOLUTION: An embodiment involves deposition and removal of a sacrificial pre-metal dielectric material before a particular primary contact etch stop layer 212 is formed. An auxiliary contact etch stop layer 250 is used in addition to the primary contact etch stop layer, which is deposited previously. In particular cases, the contact etch stop layer is of a metal-containing material such as a nitride or oxide, and may be deposited through a cyclic vapor deposition.SELECTED DRAWING: Figure 2H |
