| 发明名称 |
MERGED FIN STRUCTURES FOR FINFET DEVICES |
| 摘要 |
Merged fin structures for finFET devices and methods of manufacture are disclosed. The method of forming the structure includes forming a plurality of fin structures on an insulator layer. The method further includes forming a faceted structure on adjacent fin structures of the plurality of fin structures. The method further includes spanning a gap between the faceted structures on the adjacent fin structures with a semiconductor material. |
| 申请公布号 |
US2016111447(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201414514900 |
申请日期 |
2014.10.15 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRYANT Andres;GREENE Brian J.;JOHNSON Jeffrey B.;YU Mickey H. |
| 分类号 |
H01L27/12;H01L29/161;H01L29/16;H01L21/84;H01L21/02 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a structure, comprising:
forming a plurality of fin structures on an insulator layer; forming a faceted structure on adjacent fin structures of the plurality of fin structures, wherein adjacent faceted structures define a gap therebetween; spanning the gap between the adjacent faceted structures with a first semiconductor material; and forming a semiconductor cap material over the first semiconductor material to provide at least additional thickness over the gap thereby absorbing silicide thickness variations and providing a region to be recessed and then filled with silicide. |
| 地址 |
Armonk NY US |
