发明名称 |
ABSORBER SURFACE MODIFICATION |
摘要 |
The present disclosure provides systems and methods for depositing an alkaline metal layer on an absorber to generate a copper-poor region at a surface of the absorber. The copper-poor region provides an increased efficiency over non-treated absorbers having copper-rich surfaces. The alkaline metal layer may be deposited by any suitable deposition method, such as, for example, a wet deposition method. After the alkaline metal layer is deposited, the absorber is annealed, causing the alkaline metal layer to interact with the absorber to reduce the copper-profile of the absorber at the interface between the alkaline metal layer and the absorber. |
申请公布号 |
US2016111566(A1) |
申请公布日期 |
2016.04.21 |
申请号 |
US201414517961 |
申请日期 |
2014.10.20 |
申请人 |
TSMC Solar Ltd. |
发明人 |
CHEN Shih-Wei |
分类号 |
H01L31/032;H01L31/0224;B05C11/10;H01L31/18;B05C3/02;B05B1/30 |
主分类号 |
H01L31/032 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a photovoltaic cell, comprising the steps of:
forming an absorber on a back electrode; depositing a material comprising an alkaline metal on a surface of the absorber; and annealing the absorber to reduce a copper content of the absorber at the surface. |
地址 |
Taichung City TW |