发明名称 ABSORBER SURFACE MODIFICATION
摘要 The present disclosure provides systems and methods for depositing an alkaline metal layer on an absorber to generate a copper-poor region at a surface of the absorber. The copper-poor region provides an increased efficiency over non-treated absorbers having copper-rich surfaces. The alkaline metal layer may be deposited by any suitable deposition method, such as, for example, a wet deposition method. After the alkaline metal layer is deposited, the absorber is annealed, causing the alkaline metal layer to interact with the absorber to reduce the copper-profile of the absorber at the interface between the alkaline metal layer and the absorber.
申请公布号 US2016111566(A1) 申请公布日期 2016.04.21
申请号 US201414517961 申请日期 2014.10.20
申请人 TSMC Solar Ltd. 发明人 CHEN Shih-Wei
分类号 H01L31/032;H01L31/0224;B05C11/10;H01L31/18;B05C3/02;B05B1/30 主分类号 H01L31/032
代理机构 代理人
主权项 1. A method for forming a photovoltaic cell, comprising the steps of: forming an absorber on a back electrode; depositing a material comprising an alkaline metal on a surface of the absorber; and annealing the absorber to reduce a copper content of the absorber at the surface.
地址 Taichung City TW