发明名称 BACK-LIT PHOTODETECTOR
摘要 Described herein are devices operable to detect various portions of radiation incident on a receiving area of the device, systems incorporating the same, methods of using and methods of manufacturing thereof. Such a device comprises a substrate; at least one first feature; and at least one second feature, both extending substantially perpendicularly from the substrate. The at least one first feature and the at least second feature are operable to selectively absorb various portions of the radiation defined by their respective ranges of wavelengths. The at least one first feature and the at least one second feature are positioned on the substrate such that at least 50% of the first portion and at least 50% of the second portion of the radiation incident on the receiving area is selectively absorbed by the at least one first feature and the at least one second feature, respectively.
申请公布号 US2016111460(A1) 申请公布日期 2016.04.21
申请号 US201414516402 申请日期 2014.10.16
申请人 ZENA TECHNOLOGIES, INC. 发明人 WOBER Munib
分类号 H01L27/146;H01L31/105 主分类号 H01L27/146
代理机构 代理人
主权项 1. A device comprising: at least one first feature, wherein the at least one first feature extends substantially perpendicularly from a substrate, the at least one first feature is operable to selectively absorb the first portion of radiation, the wavelengths of the first portion of the radiation are within a first range; and at least one second feature, wherein the at least one second feature extends substantially perpendicularly from the substrate, the at least one second feature is operable to selectively absorb the second portion of the radiation, the wavelengths of the second portion of the radiation are within a second range, wherein the first range is different from the second range, wherein the at least one first feature and the at least one second feature are positioned on the substrate such that at least a first percentage of the first portion of the radiation incident on the receiving area is absorbed by the at least one first feature, and at least a second percentage of the second portion of the radiation incident on the receiving area is absorbed by the at least one second feature, and wherein the first percentage or the second percentage is at least 50%.
地址 CAMBRIDGE MA US