Semiconductor Device and Method of Forming Same

摘要

Semiconductor devices and methods of forming the same are disclosed. A dielectric layer is formed over an underlying layer. A first mask layer and a second mask layer are formed on the dielectric layer such that the first mask layer is interposed between the second mask layer and the dielectric layer. An opening is formed in the first mask layer, the second mask layer and the dielectric layer. Subsequently, the second mask layer is removed. The opening is extended and corners of the first mask layer are rounded. A conductive feature is formed in the extended opening.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a dielectric layer over an underlying layer; forming a first mask layer on the dielectric layer; forming an opening, the opening extending through the first mask layer and into the dielectric layer; rounding corners of the first mask layer; and forming a first conductive feature in the opening.