发明名称 APPARATUS FOR THE VACUUM TREATMENT OF SUBSTRATES
摘要 The invention relates to an apparatus for the vacuum treatment of substrates (130), comprising a vacuum chamber (1) having a plasma device (160) of a process chamber (110) and a holding device (135) for substrates (130), which is arranged in the process chamber (110), underneath the plasma device, wherein the process chamber (110) comprises an upper subsection (105a) having a side wall (106a) and a lower subsection (105b) having a side wall (106b), and the upper subsection (105a) and the lower subsection (105b) can be moved vertically relative to each other. According to the invention between the side wall (106a) of the upper subsection (105a) and the side wall (106b) of the lower subsection (105b), a lower flow path (105c) extends between the inner region (140) of the process chamber (110) and the inner region (1a) of the vacuum chamber (1) that is arranged outside the upper subsection (105a). Furthermore, between an upper edge region (107) of the upper subsection (105a) and a sealing element (109) arranged in an upper part of the inner region (1a) of the vacuum chamber (1), an upper flow path (190) is provided between the inner region (140) of the process chamber (110) and the inner region (1a) of the vacuum chamber (1) that is arranged outside the upper subsection (105a), wherein the upper subsection (105a) can be moved relative to the vacuum chamber (1) into a lower position, in which the upper flow path (190) is opened, the upper subsection (105a) can be moved relative to the vacuum chamber (1) into an upper position, in which the upper flow path (190) is closed.
申请公布号 US2016111313(A1) 申请公布日期 2016.04.21
申请号 US201414782354 申请日期 2014.03.26
申请人 LEYBOLD OPTICS GMBH 发明人 HAGEDORN Harro;PISTNER Jürgen;VOGT Thomas;MULLER Alexander
分类号 H01L21/683;C23C14/34;C23C14/56;H01L21/677 主分类号 H01L21/683
代理机构 代理人
主权项 1. An apparatus for the vacuum treatment of substrates, having a vacuum chamber having a plasma device a process chamber and a holding device for substrates which is arranged in the process chamber below the plasma device, wherein the process chamber comprises an upper sub-portion having a side wall and a lower sub-portion having a side wall the upper sub-portion and the lower sub-portion are movable vertically relative to one another wherein between the side wall of the upper sub-portion and the side wall of the lower sub-portion, a lower flow path is provided between the inner region of the process chamber and the inner region of the vacuum chamber arranged outside the upper sub-portion between an upper edge region of the upper sub-portion and a sealing element arranged in an upper part of the inner region of the vacuum chamber, an upper flow path is provided between the inner region of the process chamber and the inner region of the vacuum chamber arranged outside the upper sub-portion, wherein the upper sub-portion is movable vertically into a lower position, in which the upper flow path is open the upper sub-portion is movable vertically into an upper position, in which the upper flow path is closed.
地址 Alzenau DE