METHOD FOR MANUFACTURING SILICON-CARBIDE SEMICONDUCTOR ELEMENT

摘要

In this method for manufacturing a semiconductor element, a modified layer produced by subjecting a substrate (70) to mechanical polishing is removed by heating the substrate (70) under Si vapor pressure. An epitaxial layer formation step, an ion implantation step, an ion activation step, and a second removal step are then performed. In the second removal step, macro-step bunching and insufficient ion-implanted portions of the surface of the substrate (70) performed the ion activation step are removed by heating the substrate (70) under Si vapor pressure. After that, an electrode formation step in which electrodes are formed on the substrate (70) is performed.

主权项

1. A method for manufacturing a semiconductor element using a substrate having an off angle, the substrate having at least its surface made of a SiC layer, the method comprising:
a first removal step of removing a modified layer produced by subjecting the substrate to mechanical polishing by heating the substrate under Si vapor pressure; an epitaxial layer formation step of forming an epitaxial layer on the substrate that is the modified layer is removed; an ion implantation step of implanting ions on the epitaxial layer; an ion activation step of activating ions by heating the substrate; a second removal step of removing at least one insufficient ion-implanted portion of the surface of the substrate that is the ion activation step is performed thereon and a macro-step bunching occurred on the surface of the substrate during the ion activation step by heating the substrate under Si vapor pressure; and an electrode formation step of forming at least one electrode on the substrate from which at least one insufficient ion-implanted portion and macro-step bunching are removed by the second removal step.