发明名称 Image Sensor Device and Method
摘要 A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.
申请公布号 US2016111464(A1) 申请公布日期 2016.04.21
申请号 US201514981294 申请日期 2015.12.28
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Yaung Dun-Nian;Hung Feng-Chi;Liu Jen-Cheng;Lin Jeng-Shyan;Tsai Shuang-Ji
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A method of manufacturing an image sensor device, the method comprising: forming a first photosensitive diode and a second photosensitive diode in a substrate, the first photosensitive diode and the second photosensitive diode being in adjacent pixel regions; forming a first color filter blanket layer over the substrate; removing a first portion of the first color filter blanket layer to form a first color filter over the first photosensitive diode; forming a second color filter blanket layer over the substrate; removing a second portion of the second color filter blanket layer to form a second color filter over the second photosensitive diode, the removing the first portion and the removing the second portion forming an opening adjacent both the first color filter and the second color filter; and depositing a gap material over the first color filter and the second color filter, wherein the depositing the gap material encapsulates a void within the opening.
地址 Hsin-Chu TW