STRUCTURE AND FORMATION METHOD OF DAMASCENE STRUCTURE

摘要

A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a first conductive feature over the semiconductor substrate. The semiconductor device also includes a first dielectric layer over the semiconductor substrate and surrounding the first conductive feature. The semiconductor device further includes a second conductive feature over the first conductive feature, and the second conductive feature extends into the first conductive feature. In addition, the semiconductor device includes a second dielectric layer over the first dielectric layer and surrounding the second conductive feature.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a first conductive feature over the semiconductor substrate; a first dielectric layer over the semiconductor substrate and surrounding the first conductive feature; a second conductive feature over the first conductive feature, wherein the second conductive feature extends into the first conductive feature; a second dielectric layer over the first dielectric layer and surrounding the second conductive feature; an etch stop layer between the first dielectric layer and the second dielectric layer, wherein the etch stop layer surrounds the first conductive feature; and an intermediate dielectric layer between the etch stop layer and the second dielectric layer, wherein the intermediate dielectric layer surrounds the first conductive feature and the second conductive feature.