MANUFACTURING METHOD OF HIGH QULITY NITRIDE SUBSTRATE USING LATERAL GROWTH

摘要

The present invention provides a method for manufacturing a high-quality nitride substrate using a lateral growth, which includes the steps of: forming SiO_2 layer or SiN layer in such a manner that the SiO_2 or SiN layer is deposited on first and second substrates; placing a nitride seed on the SiO_2 or SiN layer formed on the first substrate to fix the nitride seed to the first substrate; placing the second substrate on which the SiO_2 or SiN layer is formed on the nitride seed to fix the second substrate to the nitride seed; lateral-growing the nitride seed by introducing a group III element source and an N source into a space existing between the first and second substrates; and selectively etching the SiO_2 or SiN layer through a wet process to remove etching the SiO_2 or SiN layer and separating a nitride substrate formed in the lateral growth from the first and second substrates. According to the present invention, the process is very simple, the reproducibility is very good, and a high-quality nitride substrate can be obtained.