发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can supply power source voltage at a proper level to a power source terminal of a logic chip, for example.SOLUTION: According to one embodiment, a semiconductor device includes an interposer having a substrate, first through electrodes, multilayer wiring and power source pads. The first through electrodes pierce the substrate from a first principal surface side to a second principal surface side. The first through electrodes electrically connect signal terminals of a logic chip and signal terminals of a memory chip. The multilayer wiring is provided on the first principal surface side of the substrate. To the multilayer wiring, a power source terminal of the logic chip is electrically connected. The power source pads are provided on the first principal surface side of the substrate. The power source pads are electrically connected to the power source terminals of the logic chip via the multilayer wiring. To the power source pads, metal wires are bonded. A package substrate has power source wiring. The power source pads and the power source wiring are electrically connected with each other via the metal wires.SELECTED DRAWING: Figure 1
申请公布号 JP2016058627(A) 申请公布日期 2016.04.21
申请号 JP20140185364 申请日期 2014.09.11
申请人 TOSHIBA CORP 发明人 HOSOMI HIDEKAZU
分类号 H01L25/065;H01L23/12;H01L23/32;H01L25/07;H01L25/18 主分类号 H01L25/065
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