| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which effectively inhibits deterioration in reliability associated with hydrogen diffusion by little extra process without causing an increase in device size.SOLUTION: A semiconductor device in which a flash memory cell transistor and a peripheral transistor are merged comprises: gate insulation films 14a, 14b formed on a surface of a channel layer; gate electrodes 15a, 15b formed on top faces of the gate insulation films 14a, 14b, respectively; and diffusion layers 12a, 12b formed in a channel layer. The semiconductor device further comprises: a polycrystalline silicon film 22 formed to cover surfaces of the gate electrodes 15a, 15b and the diffusion layers 12a, 12b; and an interlayer insulation film 23 formed to cover the gate electrodes 15a, 15b and the polycrystalline silicon film 22.SELECTED DRAWING: Figure 1 |
