发明名称 ION IMPLANTER AND ADJUSTMENT METHOD OF ION BEAM
摘要 PROBLEM TO BE SOLVED: To achieve enhancement of energy accuracy, while avoiding decrease in productivity of an ion implanter.SOLUTION: The energy analysis slit 28 of an ion implanter is configured to be able to switch a standard slit opening 110 for use in the injection processing performed under given injection conditions, and a high accuracy slit opening 112 having an energy accuracy higher than that of the standard slit opening 110, and used for adjusting the acceleration parameters of a high-frequency linear accelerator. The acceleration parameters are determined for the given injection conditions, so that at least some of the ions supplied to the high-frequency linear accelerator are accelerated to a target energy, and the amount of beam current measured by a beam measurement section corresponds to a target amount of beam current.SELECTED DRAWING: Figure 4
申请公布号 JP2016058300(A) 申请公布日期 2016.04.21
申请号 JP20140184995 申请日期 2014.09.11
申请人 SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO LTD 发明人 WATANABE KAZUHIRO;TAKAHASHI YUJI;UENO YUSUKE
分类号 H01J37/317;H01L21/265 主分类号 H01J37/317
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